WebIRHMB6S7260 - MOSFET from Infineon Technologies. Get product specifications, Download the Datasheet, Request a Quote and get pricing for IRHMB6S7260 on everything PE … WebThese devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Different Packages: IRHF6S7230 inTO-39 Package IRHMB6S7260 in Tabless_TO-254AA Package IRHMS6S7260 in Low-Ohmic_TO-254AA Package
PD-97860 IRHMB6S7260 RADIATION HARDENED POWER MOSF
WebApr 9, 2024 · 70 ns. Typical Turn-On Delay Time: 40 ns. Width: 6.6 mm. Unit Weight: 0.011993 oz. Select at least one checkbox above to show similar products in this … IRHMB6S7260 Pre-Irradiation Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter Up to 300 kRads(Si) 1 Units Test Conditions Min. Max. BVDSS Drain-to-Source Breakdown Voltage 200 ––– V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 1.0mA how to report identity theft social security
International Rectifier - IRHMB6S7260 Rad hard, 200V, …
WebIRHMB6S7260SCS Discretes 200V 45A 35A Package TO-254AA (Tabless) from International Rectifier HIREL an Infineon Company doEEEt, Space EEE Parts Database, quality level, prices and documentation WebAccept Cookies on the doEEEt website. We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we'll assume that you are happy to receive all cookies on the doEEEt website. Web2 2024-10-26 IRHMS67260 JANSR2N7584T1 Pre-Irradiation International Rectifier HiRel Products, Inc. Thermal Resistance Symbol Parameter Typ. Max. Units R TJC Junction-to … how to report ideas in group discussion